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In situ device processing using shadow mask seleçtive area epitaxy and in situ metallizationLUO, Y; ZENG, L; LIN, W et al.Journal of electronic materials. 2000, Vol 29, Num 5, pp 598-602, issn 0361-5235Article

Orientation dependence of S,Zn,Si,Te and Sn doping in OMCVD growth of InP and GaAs : application to DH lasers and lateral p-n junction arrays grown on non-planar substratesBHAT, R; CANEAU, C; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 772-778, issn 0022-0248Conference Paper

Epitaxial growth of GaAs/GaAs heterostructuresSANDS, T; HARBISON, J. P; CHAN, W. K et al.Applied physics letters. 1988, Vol 52, Num 15, pp 1216-1218, issn 0003-6951Article

Nonlinear high-frequency response of GaAs metal-semiconductor field effect transistorsABELES, J. H; TU, C. W; SCHWARZ, S. A et al.Applied physics letters. 1986, Vol 48, Num 23, pp 1620-1622, issn 0003-6951Article

Grafting polythiophene on polyethylene surfacesCHANUNPANICH, N; ULMAN, A; STRZHEMECHNY, Y. M et al.Polymer international. 2003, Vol 52, Num 1, pp 172-178, issn 0959-8103, 7 p.Article

Surface modification of polyethylene through brominationCHANUNPANICH, N; ULMAN, A; STRZHEMECHNY, Y. M et al.Langmuir. 1999, Vol 15, Num 6, pp 2089-2094, issn 0743-7463Article

Measurements of the Flory-Huggins interaction parameter for polystyrene-poly(4-vinylpyridine) blendsCLARKE, C. J; EISENBERG, A; SAUER, B. B et al.Macromolecules. 1997, Vol 30, Num 14, pp 4184-4188, issn 0024-9297Article

Ion mixing of III-V compound semiconductor layered structuresXIA, W; PAPPERT, S. A; ZHU, B et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2602-2610, issn 0021-8979Article

GaAs doping by rapid thermal diffusion of a laser-deposited elemental Zn source film : shallow and laterally graded diffusionsLICATA, T. J; SCARMOZZINO, R; GARCIA, B. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 77-83, issn 0734-211XConference Paper

Study of interdiffusion in a Te-doped AlAs-GaAs superlatticeMEI, P; SCHWARZ, S. A; VENKATESAN, T et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 2165-2167, issn 0021-8979Article

Conversion of InP/In_0.53Ga_0.47As superlattices to Zn₃P₂/In_1-xGa_xAs and Zn₃P₂/Zn₃As₂ superlattices by Zn diffusionHWANG, D. M; SCHWARZ, S. A; MEI, P et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1160-1162, issn 0003-6951, 3 p.Article

Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disorderingWERNER, J; KAPON, E; STOFFEL, N. G et al.Applied physics letters. 1989, Vol 55, Num 6, pp 540-542, issn 0003-6951, 3 p.Article

A matched filter technique for Auger depth profile sensitivity enhancementSCHWARZ, S. A; YOON, H. W.Applied surface science. 1988, Vol 31, Num 2, pp 189-196, issn 0169-4332Article

Substrate effects on the properties of Y-Ba-Cu-O superconducting films prepared by laser depositionVENKATESAN, T; CHANG, C. C; WU, X. D et al.Journal of applied physics. 1988, Vol 63, Num 9, pp 4591-4598, issn 0021-8979Article

Chain orientation and its effect on mobility at a rubbed surfacePU, Y; WHITE, H; RAFAILOVICH, M. H et al.Macromolecules. 2001, Vol 34, Num 14, pp 4972-4977, issn 0024-9297Article

Surface-induced ordering in graft copolymer thin filmsSHOUREN GE; LANTAO GUO; RAFAILOVICH, M. H et al.Langmuir. 1999, Vol 15, Num 8, pp 2911-2915, issn 0743-7463Article

Planar, low-loss optical waveguides fabricated by solid-phase regrowthXIA, W; YU, L. S; GUAN, Z. F et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1269-1271, issn 0003-6951Article

Automated control of III-V semiconductor composition and structure by spectroellipsometryQUINN, W. E; ASPNES, D. E; BRASIL, M. J. S. P et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 759-761, issn 0734-211XConference Paper

Closed-loop control of growth of semiconductor materials and structures by spectroellipsometryASPNES, D. E; QUINN, W. E; Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 4, pp 1840-1841, issn 0734-2101, 2Conference Paper

An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structuresWANG, L. C; WANG, X. Z; HSU, S. N et al.Journal of applied physics. 1991, Vol 69, Num 8, pp 4364-4372, issn 0021-8979, 1Article

Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystalsFULIN XIONG; TSAI, C. J; VREELAND, T. JR et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 2964-2969, issn 0021-8979Article

Optically controlled surface-emitting lasersCHAN, W. K; HARBISON, J. P; VON LEHMEN, A. C et al.Applied physics letters. 1991, Vol 58, Num 21, pp 2342-2344, issn 0003-6951Article

Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescenceSKROMME, B. J; BHAT, R; KOZA, M. A et al.Physical review letters. 1990, Vol 65, Num 16, pp 2050-2053, issn 0031-9007, 4 p.Article

Silicon vapor phase epitaxial growth catalysis by the presence of germaneGARONE, P. M; STURM, J. C; SCHWARTZ, P. V et al.Applied physics letters. 1990, Vol 56, Num 13, pp 1275-1277, issn 0003-6951Article